? semiconductor components industries, llc, 2016 august, 2016 ? rev. 1 1 publication order number: NTMFS4C032N/d NTMFS4C032N power mosfet 30 v, 38 a, single n?channel, so?8 fl features ? low r ds(on) to minimize conduction losses ? low capacitance to minimize driver losses ? optimized gate charge to minimize switching losses ? these devices are pb?free, halogen free/bfr free and are rohs compliant applications ? cpu power delivery ? dc?dc converters maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain?to?source v oltage v dss 30 v gate?to?source v oltage v gs 20 v continuous drain current r ja (note 1) steady state t a = 25 c i d 13.0 a t a = 80 c 9.7 power dissipation r ja (note 1) t a = 25 c p d 2.46 w continuous drain current r ja 10 s (note 1) t a = 25 c i d 19.1 a t a = 80 c 14.3 power dissipation r ja 10 s (note 1) t a = 25 c p d 5.32 w continuous drain current r ja (note 2) t a = 25 c i d 7.2 a t a = 80 c 5.4 power dissipation r ja (note 2) t a = 25 c p d 0.75 w continuous drain current r jc (note 1) t c = 25 c i d 38 a t c =80 c 29 power dissipation r jc (note 1) t c = 25 c p d 21.6 w pulsed drain current t a = 25 c, t p = 10 s i dm 106 a current limited by package t a = 25 c i dmax 70 a operating junction and storage temperature t j , t stg ?55 to +150 c source current (body diode) i s 19 a drain to source dv/dt dv/d t 7.0 v/ns single pulse drain?to?source avalanche energy (t j = 25 c, v gs = 10 v, i l = 21 a pk , l = 0.1 mh, r gs = 25 ) (note 3) e as 22 mj lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. surface?mounted on fr4 board using 1 sq?in pad, 1 oz cu. 2. surface?mounted on fr4 board using the minimum recommended pad size. 3. this is the absolute maximum rating. parts are 100% tested at t j = 25 c, v gs = 10 v, i l = 15 apk, e as = 11 mj. so?8 flat lead case 488aa style 1 marking diagram www. onsemi.com a = assembly location y = year w = work week zz = lot traceabililty 4c032 aywzz 1 v (br)dss r ds(on) max i d max 30 v 7.35 m @ 10 v 38 a 11.15 m @ 4.5 v n?channel mosfet device package shipping ? ordering information NTMFS4C032Nt1g so?8 fl (pb?free) 1500 / tape & reel NTMFS4C032Nt3g so?8 fl (pb?free) 5000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. s s s g d d d d g (4) s (1,2,3) d (5?8)
NTMFS4C032N www. onsemi.com 2 thermal resistance maximum ratings parameter symbol value unit junction?to?case (drain) r jc 5.8 c/w junction?to?ambient ? steady state (note 4) r ja 50.8 junction?to?ambient ? steady state (note 5) r ja 166.6 junction?to?ambient ? (t 10 s) (note 4) r ja 23.5 4. surface?mounted on fr4 board using 1 sq?in pad, 1 oz cu. 5. surface?mounted on fr4 board using the minimum recommended pad size. electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v drain?to?source breakdown voltage (transient) v (br)dsst v gs = 0 v, i d(aval) = 6.1 a, t case = 25 c, t transient = 100 ns 34 v drain?to?source breakdown voltage temperature coefficient v (br)dss / t j 14.9 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 24 v t j = 25 c 1.0 a t j = 125 c 10 gate?to?source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 6) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 1.3 2.1 v negative threshold temperature coefficient v gs(th) /t j 4.8 mv/ c drain?to?source on resistance r ds(on) v gs = 10 v i d = 30 a 6.11 7.35 m v gs = 4.5 v i d = 12 a 9.29 11.15 forward transconductance g fs v ds = 1.5 v, i d = 15 a 40 s gate resistance r g t a = 25 c 0.3 1.0 2.0 charges and capacitances input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = 15 v 770 pf output capacitance c oss 443 reverse transfer capacitance c rss 127 capacitance ratio c rss /c iss v gs = 0 v, v ds = 15 v, f = 1 mhz 0.165 total gate charge q g(tot) v gs = 4.5 v, v ds = 15 v; i d = 30 a 7.8 nc threshold gate charge q g(th) 1.4 gate?to?source charge q gs 2.9 gate?to?drain charge q gd 3.7 gate plateau voltage v gp 3.6 v total gate charge q g(tot) v gs = 10 v, v ds = 15 v; i d = 30 a 15.2 nc switching characteristics (note 7) turn?on delay time t d(on) v gs = 4.5 v, v ds = 15 v, i d = 15 a, r g = 3.0 9.0 ns rise time t r 35 turn?off delay time t d(off) 13 fall time t f 5.0 6. pulse test: pulse width 300 s, duty cycle 2%. 7. switching characteristics are independent of operating junction temperatures.
NTMFS4C032N www. onsemi.com 3 electrical characteristics (t j = 25 c unless otherwise specified) parameter unit max typ min test condition symbol switching characteristics (note 7) turn?on delay time t d(on) v gs = 10 v, v ds = 15 v, i d = 15 a, r g = 3.0 6.0 ns rise time t r 26 turn?off delay time t d(off) 16 fall time t f 3.0 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 10 a t j = 25 c 0.82 1.1 v t j = 125 c 0.69 reverse recovery time t rr v gs = 0 v, dis/dt = 100 a/ s, i s = 30 a 23.4 ns charge time t a 12.1 discharge time t b 11.3 reverse recovery charge q rr 9.7 nc 6. pulse test: pulse width 300 s, duty cycle 2%. 7. switching characteristics are independent of operating junction temperatures.
NTMFS4C032N www. onsemi.com 4 typical characteristics figure 1. on?region characteristics figure 2. transfer characteristics v ds , drain?to?source voltage (v) v gs , gate?t o?source voltage (v) 5 2 1 0 0 10 20 50 4.0 3.5 3.0 2.0 1.5 1.0 figure 3. on?resistance vs. v gs figure 4. on?resistance vs. drain current and gate voltage v gs , gate?t o?source voltage (v) i d , drain current (a) 9.0 8.0 7.0 10 6.0 5.0 4.0 3.0 0.006 0.008 0.010 70 50 30 60 40 20 0.010 0.014 0.018 0.022 0.006 figure 5. on?resistance variation with temperature figure 6. drain?to?source leakage current vs. voltage t j , junction temperature ( c) v ds , drain?to?source voltage (v) 150 125 100 75 25 0 ?25 ?50 0.8 1.0 1.1 1.3 30 25 20 15 10 5 10 100 1000 10000 i d , drain current (a) i d , drain current (a) r ds(on) , drain?to?source resistance ( ) r ds(on) , drain?to?source resistance ( ) r ds(on) , drain?to?source resistance (normalized) i dss , leakage (na) 4.0 v 3.4 v 3.2 v 3.0 v 2.8 v 4.5 v t j = 25 c v ds = 5 v t j = 25 c t j = 125 c t j = ?55 c 0.009 0.016 i d = 30 a v gs = 4.5 v t j = 25 c v gs = 10 v 50 i d = 30 a v gs = 10 v v gs = 0 v t j = 85 c t j = 150 c t j = 125 c 2.5 0.007 0.012 0.011 1.2 1.4 0.7 1.5 0.013 60 10 3.8 v 3 0 20 40 60 30 70 10 50 5.0 0.5 0 0.015 0.014 0.008 1.6 1.7 0.9 4.5 30 40 0.012 0.020 4 70 3.6 v 6.5 v 10 v 4.2 v
NTMFS4C032N www. onsemi.com 5 typical characteristics figure 7. capacitance variation figure 8. gate?to?source and drain?to?source voltage vs. total charge v ds , drain?to?source voltage (v) q g , total gate charge (nc) 25 20 15 10 30 5 0 0 200 figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current r g , gate resistance ( ) v sd , source?to?drain voltage (v) 100 10 1 1 10 100 1000 0.9 0.8 0.7 0.6 0.5 0.4 0 5 10 15 figure 11. maximum rated forward biased safe operating area figure 12. maximum avalanche energy vs. starting junction temperature v ds , drain?to?source voltage (v) t j , starting junction temperature ( c) 100 10 1 0.1 0.01 0.1 1 10 150 125 100 75 50 25 0 2 6 10 c, capacitance (pf) v gs , gate?t o?source voltage (v) t, time (ns) i s , source current (a) i d , drain current (a) e as , single pulse drain?to? source avalanche energy (mj) v gs = 0 v t j = 25 c c iss c oss c rss q t v dd = 15 v i d = 15 a v gs = 10 v t d(on) t r t f t j = 25 c t j = 125 c v gs = 0 v 0 v < v gs < 10 v single pulse t c = 25 c r ds(on) limit thermal limit package limit 100 s 10 ms 1 ms dc i d = 15 a 500 4 8 100 300 400 12 1000 1.0 0 2 5 7 9 11 0 4 6 8 12 14 16 t j = 25 c v dd = 15 v v gs = 10 v i d = 30 a 20 25 30 10 s 0.01 10 2 600 700 900 100 800 1 3 6 8 10 4 q gs q gd t d(off)
NTMFS4C032N www. onsemi.com 6 typical characteristics figure 13. thermal response pulse time (sec) 0.01 0.001 0.0001 0.00001 0.000001 0.01 0.1 1 10 100 r(t) ( c/w) 0.1 1 10 100 1000 10% duty cycle = 50% 20% 5% 2% 1% single pulse figure 14. g fs vs. i d i d (a) 40 30 10 0 0 5 30 g fs (s) 20 50 15 60 20 25 50 70 figure 15. avalanche characteristics pulse width (seconds) 1.e?03 1.e?04 1.e?06 1.e?08 1 10 100 i d , drain current (a) 1.e?05 t a = 25 c t a = 85 c 1.e?07 35 45 10 40
NTMFS4C032N www. onsemi.com 7 package dimensions dfn5 5x6, 1.27p (so?8fl) case 488aa issue m style 1: pin 1. source 2. source 3. source 4. gate 5. drain *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.270 2x 0.750 1.000 0.905 4.530 1.530 4.560 0.495 3.200 1.330 0.965 2x 2x 4x 4x pitch dimensions: millimeters 1 recommended m 3.00 3.40 0 ??? 3.80 12 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeter. 3. dimension d1 and e1 do not include mold flash protrusions or gate burrs. 1234 top view side view bottom view d1 e1 d e 2 2 b a 0.20 c 0.20 c 2 x 2 x dim min nom millimeters a 0.90 1.00 a1 0.00 ??? b 0.33 0.41 c 0.23 0.28 d 5.15 d1 4.70 4.90 d2 3.80 4.00 e 6.15 e1 5.70 5.90 e2 3.45 3.65 e 1.27 bsc g 0.51 0.575 k 1.20 1.35 l 0.51 0.575 l1 0.125 ref a 0.10 c 0.10 c detail a 14 l1 e/2 8x d2 g e2 k b a 0.10 b c 0.05 c l detail a a1 c 4 x c seating plane max 1.10 0.05 0.51 0.33 5.10 4.20 6.10 3.85 0.71 1.50 0.71 m pin 5 (exposed pad) 5.00 5.30 6.00 6.30 e p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 NTMFS4C032N/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner.
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